Onsemi MBRA210LT3G/NRVBA210LT3G Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal.to.silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are AC.DC and DC.DC converters, reverse battery protection, and Oring of multiple supply voltages and any other application where performance and size are critical.