IRF IRL7472L1 40V Single N-Channel HEXFET Power MOSFET

Package limit current based on source connection technology

Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.016mH, RG = 50W, IAS = 195A, VGS =10V.

ISD ≤ 195A, di/dt ≤ 984A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

R is measured at TJ approximately 90°C.

Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50W, IAS = 39A, VGS =10V.

Silicon limit current based on maximum allowable junction temperature TJmax.